Apex Microdevices
Thin Film Process Engineer
- Compensation
- Not disclosed
- Location
- Dayton, United States
- Work setup
- Not specified
- Seniority
- Junior
- Employment
- Not specified
- Experience
- 0+ years
- Category
- Industrial engineering
- Posted
Must have
- PhD in electrical engineering, materials science, physics, or a related discipline
- Early-career (0-10 years post Ph.D.) research experience in thin film growth, including RF sputtering of ferroelectric thin films
- Experience with cleanroom microelectronics fabrication and device integration
- Familiarity with electrical characterization of ferroelectric switching and leakage behavior
- Excellent technical communication skills as demonstrated by research conference presentations and peer-reviewed publications.
- U.S. citizenship required
- Must be able to pass a background check required for all contractors who work on-site at WPAFB and use government computer networks.
Nice to have
- Experience with high-power impulse magnetron sputtering (HiPIMS)
- Background in compute or memory device electrical characterization
- Broad expertise in electrical characterization and device fabrication
Full description
Microelectronics Thin Film Growth Research Engineer
Apex Microdevices is seeking an entry-level research scientist or engineer focused on ferroelectric nitride materials and device prototyping to join the Electromagnetic Materials and Processing Research Team within the Foundational Technologies Directorate (former Materials and Manufacturing Directorate) at the Air Force Research Laboratory (AFRL) at Wright-Patterson Air Force Base in Dayton, Ohio. This position focuses on developing ferroelectric AlScN and related materials and integrating them into semiconductor platforms for memory, RF, and advanced capacitor applications.
Why Join Apex Microdevices?
- Competitive compensation and benefits
- Opportunity to work on advanced microelectronics technologies
- Relocation assistance available.
Responsibilities for this role include, but are not limited to, the following:
- Grow ferroelectric thin films using RF sputtering and integrate them into microelectronic devices.
- Perform cleanroom microelectronics fabrication for device integration and prototyping.
- Conduct electrical characterization of ferroelectric switching and leakage behavior.
- Support development of ferroelectric semiconductor platforms for memory, RF, and advanced capacitor concepts.
Minimum Qualifications:
- PhD in electrical engineering, materials science, physics, or a related discipline
- Early-career (0-10 years post Ph.D.) research experience in thin film growth, including RF sputtering of ferroelectric thin films
- Experience with cleanroom microelectronics fabrication and device integration
- Familiarity with electrical characterization of ferroelectric switching and leakage behavior
- Excellent technical communication skills as demonstrated by research conference presentations and peer-reviewed publications.
- U.S. citizenship required
- Must be able to pass a background check required for all contractors who work on-site at WPAFB and use government computer networks.
Desired Qualifications
- Experience with high-power impulse magnetron sputtering (HiPIMS)
- Background in compute or memory device electrical characterization
- Broad expertise in electrical characterization and device fabrication